According to micronet news, recently, under the leadership of the chief scientist, Academician Yang Deren, the Advanced Semiconductor Research Institute of Hangzhou International Science and Technology Innovation Center of Zhejiang University has invented a new melt method technology route to develop gallium oxide bulk single crystals and wafers. A 2-inch (50.8 mm) diameter gallium oxide wafer was successfully fabricated.
According to information from the Hangzhou Science and Technology Innovation Center of Zhejiang University, gallium oxide wafers grown using the new technology route have two significant advantages. Second, the new route of melt method is adopted, which reduces the use of noble metal iridium, which makes the growth process of gallium oxide not only simpler and controllable, but also lower in cost, and has greater industrialization prospects.
also,The team plans to produce large-scale gallium oxide wafers with a diameter of 4 inches in 2 yearsto further help the industrial development of domestic gallium oxide materials.
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The post The fourth generation semiconductor gallium oxide, the new technology route of Zhejiang University Hangzhou Science and Technology Innovation Center prepares 2-inch wafers appeared first on Gamingsym.